Infineon Technologies BSC123N08NS3 G

Manufacturer: Infineon
Product Type: MOSFETs
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package / Box: TDSON-8
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-Drain Source Breakdown Voltage: 80 V
Id-continuous drain current: 55 A
Rds On-drain-source on-resistance: 10.3 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th-gate-source threshold voltage: 2 V
Qg-gate charge: 25 nC
Minimum operating temperature: - 55 C
Maximum working temperature: + 150 C
Pd-power dissipation: 66 W
Channel Mode: Enhancement
Brand name: OptiMOS
Series: OptiMOS 3
Package: Reel
Packaging: Cut Tape
Package: MouseReel
Trademark: Infineon Technologies
Configuration: Single
Fall time: 4 ns
Forward Transconductance - Min: 22 S
Height: 1.27mm
Length: 5.9mm
Product Type: MOSFETs
Rise time: 18 ns
5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 19 ns
Typical turn-on delay time: 12 ns
Width: 5.15mm
Part number alias: BSC123N8NS3GXT SP000443916 BSC123N08NS3GATMA1
Unit weight: 100 mg

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